
H9JCNNNFA5MLYR-N6E
64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems
Key details
| Part Number | H9JCNNNFA5MLYR-N6E |
|---|---|
| Manufacturer | SK hynix |
| Category | LPDDR5 SDRAM |
| Lifecycle Status | Production |
| Series | LPDDR5 |
| Package / Case | 315-ball fine-pitch FBGA |
| Pin Count | 315 |
| Operating Temperature | -25°C to +85°C |
| Last Verified | 2026-07-21 |
Part information
H9JCNNNFA5MLYR-N6E Overview
H9JCNNNFA5MLYR-N6E is a SK hynix 64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems supplied in 315-ball fine-pitch FBGA. This page uses the exact orderable code because package, grade, temperature and option suffixes can change compatibility.
Key Technical Specifications
| Density | 64 Gb |
|---|---|
| Memory Type | LPDDR5 SDRAM |
| Organization | x32 mobile DRAM |
| Data Rate | Up to 6400 MT/s |
| Stacking | High-density multi-die package |
Package and Ordering Notes
The listed package is 315-ball fine-pitch FBGA with 315 pins, leads, lands or contacts. The featured image is a generic package illustration for form-factor identification and is not an actual date-code or lot photograph. The part or family is listed by SK hynix as Production at the verification date.
Sourcing Guidance
Confirm current factory lead time, packing format and revision for H9JCNNNFA5MLYR-N6E before placing the order.
For an accurate quotation, include the full MPN, target quantity, acceptable date-code range, packaging format and destination. Icearth can help review traceability documents, label photos and electrical/package alignment before order placement.
Manufacturer Documentation
Technical values were checked against SK hynix documentation. Use the linked datasheet as the controlling source and re-check revisions before PCB release or firmware qualification.
H9JCNNNFA5MLYR-N6E selection and design context
H9JCNNNFA5MLYR-N6E is cataloged as a LPDDR5 SDRAM in the LPDDR5 family. Its recorded function is 64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems. Selection should be based on the complete electrical limits, package drawing and ordering suffix rather than the abbreviated family code.
- Density: 64 Gb. Confirm address organization, software support and required usable capacity.
- Memory Type: LPDDR5 SDRAM. Confirm address organization, software support and required usable capacity.
- Organization: x32 mobile DRAM. Confirm address organization, software support and required usable capacity.
- Data Rate: Up to 6400 MT/s. Confirm system timing margin and the test conditions attached to the published limit.
Application and qualification considerations
When evaluating this component, confirm the ratings that control system compatibility, including supply conditions, interface or signal limits, timing, thermal behavior and package constraints. For a new design, review power-up behavior, interface timing, absolute maximum ratings, thermal limits and any external-component requirements in the latest manufacturer documentation. Existing-board replacement work should additionally confirm pinout, footprint, firmware assumptions and qualification grade.
Procurement checks for H9JCNNNFA5MLYR-N6E
The recorded package is 315-ball fine-pitch FBGA, the temperature range is -25°C to +85°C, and the lifecycle status is Production as of 2026-07-21. Before ordering, confirm the exact MPN on the label, packing format, quantity, date-code requirements, traceability documents and current factory status.
H9JCNNNFA5MLYR-N6E FAQ
What distinguishes H9JCNNNFA5MLYR-N6E within the LPDDR5 family?
H9JCNNNFA5MLYR-N6E is the exact orderable code for a 64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems in 315-ball fine-pitch FBGA. Related LPDDR5 devices may change package, rating, interface option or qualification grade, so compare the manufacturer ordering table before substitution.
What package and footprint checks are required for H9JCNNNFA5MLYR-N6E?
H9JCNNNFA5MLYR-N6E is recorded in 315-ball fine-pitch FBGA with 315 pins, leads or contacts. Confirm the manufacturer package drawing, dimensions, pin numbering, exposed-pad requirements and packing suffix before releasing a PCB footprint.
Which specifications should be verified when selecting H9JCNNNFA5MLYR-N6E?
Density is recorded as 64 Gb, Memory Type is recorded as LPDDR5 SDRAM. Use the latest datasheet for minimum and maximum limits, test conditions, timing and absolute maximum ratings rather than relying only on a distributor summary.
What is the lifecycle status of H9JCNNNFA5MLYR-N6E?
H9JCNNNFA5MLYR-N6E was recorded as Production when verified on 2026-07-21. Reconfirm factory status, revision availability, lead time and any last-time-buy notice before design-in or volume procurement.
What information should be included in an RFQ for H9JCNNNFA5MLYR-N6E?
Provide the complete H9JCNNNFA5MLYR-N6E orderable code, target quantity, acceptable date-code range, required packing method, delivery destination and documentation needs. For replacement work, also identify the existing package and any mandatory qualification grade.
How H9JCNNNFA5MLYR-N6E differs from related orderable parts
H9JCNNNFA5MLYR-N6E belongs to the LPDDR5 family. Compared with H9JCNNNCP3MLYR-N6E, the recorded differences include functional description: 64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems versus 32 Gb LPDDR5 mobile SDRAM for high-bandwidth, low-power systems; Density: 64 Gb, a higher recorded value than 32 Gb; and Stacking: High-density multi-die package rather than Multi-die LPDDR5 package. A shared family name does not establish pin, firmware or qualification compatibility.
| Part number | Recorded function | Package | Pins / contacts | Temperature | Lifecycle |
|---|---|---|---|---|---|
| H9JCNNNFA5MLYR-N6E | 64 Gb LPDDR5 mobile SDRAM for high-capacity, high-bandwidth systems | 315-ball fine-pitch FBGA | 315 pins, leads or contacts | -25°C to +85°C | Production |
| H9JCNNNCP3MLYR-N6E | 32 Gb LPDDR5 mobile SDRAM for high-bandwidth, low-power systems | 315-ball fine-pitch FBGA | 315 pins, leads or contacts | -25°C to +85°C | Production |
| H9JCNNNBK3MLYR-N6E | 16 Gb LPDDR5 mobile SDRAM for high-bandwidth, low-power systems | 315-ball fine-pitch FBGA | 315 pins, leads or contacts | -25°C to +85°C | Production |
For an RFQ or AVL review, quote the complete H9JCNNNFA5MLYR-N6E code and verify the manufacturer ordering table, package drawing, packing method and revision. The related numbers above are comparison references, not declared drop-in replacements.
Exact order-code identity for H9JCNNNFA5MLYR-N6E
For BOM, label, AVL and RFQ matching, preserve these visible code segments: opening alphabetic sequence H; middle numeric sequence nine; middle alphabetic sequence JCNNNFA; middle numeric sequence five; middle alphabetic sequence MLYR; middle alphabetic sequence N; middle numeric sequence six; and terminal alphabetic sequence E. The nearest published comparison codes are H9JCNNNCP3MLYR-N6E and H9JCNNNBK3MLYR-N6E. Compare every segment because a changed character can identify a different density, voltage, package, temperature, qualification or packing option.
Do not shorten the requested code to LPDDR5 or remove its terminal characters. Ask the supplier to reproduce the complete code on the quotation and provide label or traceability evidence when exact suffix matching is mandatory.
Lifecycle and sourcing review
Lifecycle information is shown for reference. Confirm current manufacturer documentation, availability and technical suitability before purchase.
Confirm current factory lead time, packing format and revision for H9JCNNNFA5MLYR-N6E before placing the order.